Title/Place of Publication
Publication ID
3982
Date Created
2007.01.30 10:56
DOI
10.1143/JJAP.41.6247
Open Access URL
English Title
X-Ray Diffractometer for Studies on Molecular-Beam-Epitaxy Growth of III-V Semiconductors
Type of Publication
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)
Journal Title
Japanese Journal of Applied Physics
Vol.
41
No.
10
Year of Publication
2002
Page
6247-6251
Place of Publication (Oral, Poster)
Conference Title
Date
Venue
Research Area
Research Method
Authors
User Card ID No.
Last/Family
First/Given
Affiliation
Corresponding
Author
First Author
0001168
Takahasi
Masamitu
JAERI
Coauthor 1
0001167
Yoneda
Yasuhiro
JAERI
Coauthor 2
0004796
Inoue
Hirotane
Himeji Institute of Technology
Coauthor 3
0002061
Yamamoto
Naomasa
Himeji Institute of Technology
Coauthor 4
0000302
Mizuki
Jun'ichiro
JAERI
Related Proposal Information
Proposal Number
None
Beamline
BL11XU
Facility to be used
SPring-8
Classification within the Site
Experiment