User Information

Title/Place of Publication
Publication ID	39556
Date Created	2020.03.06 11:16
DOI	10.4028/www.scientific.net/MSF.858.61
Open Access URL
English Title	Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Materials Science Forum Vol. 858 No. Year of Publication 2016 Page 61
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M60] X-ray Imaging

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author	0009160	Kamata	Isaho	Central Research Institute of Electric Power Industry
Coauthor 1		Hoshino	Norihiro
Coauthor 2	0039591	Tokuda	Yuichiro	National Institute of Advanced Industrial Science and Technology
Coauthor 3		Makino	Emi
Coauthor 4	0006527	Sugiyama	Naohiro	National Institute of Advanced Industrial Science and Technology
Coauthor 5		Kojima	Jun
Coauthor 6	0013411	Tsuchida	Hidekazu	Central Research Institute of Electric Power Industry

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