User Information

Title/Place of Publication
Publication ID	39555
Date Created	2020.03.06 11:05
DOI	10.1016/j.jcrysgro.2017.08.004
Open Access URL
English Title	Fast Growth of n-type 4H-SiC Bulk Crystal by Gas-Source Method
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Journal of Crystal Growth Vol. 478 No. Year of Publication 2017 Page 9-16
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M60] X-ray Imaging

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author		Hoshino	Norihiro	Central Research Institute of Electric Power Industry
Coauthor 1	0009160	Kamata	Isaho	Central Research Institute of Electric Power Industry
Coauthor 2	0039591	Tokuda	Yuichiro	Denso Corporation, National Institute of Advanced Industrial Science and Technology
Coauthor 3		Makino	Emi	Denso Corporation
Coauthor 4		Kanda	Takahiro	Denso Corporation
Coauthor 5	0006527	Sugiyama	Naohiro	National Institute of Advanced Industrial Science and Technology
Coauthor 6		Kuno	Hironari	Denso Corporation
Coauthor 7		Kojima	Jun	Denso Corporation
Coauthor 8	0013411	Tsuchida	Hidekazu	Central Research Institute of Electric Power Industry

Related Proposal Information
Proposal Number 2016B3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2016A3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2015B3321 Beamline BL08B2 Project Leader 鎌田功穂