User Information

Title/Place of Publication
Publication ID	39554
Date Created	2020.03.06 10:51
DOI	10.1016/j.jcrysgro.2017.01.004
Open Access URL
English Title	Observation of Double Shockley Stacking Fault Expansion in Heavily-Nitrogen-Doped 4H-SiC using PL Technique
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Journal of Crystal Growth Vol. 468 No. Year of Publication 2017 Page 889-893
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M60] X-ray Imaging

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author	0039591	Tokuda	Yuichiro	National Institute of Advanced Industrial Science and Technology, Denso Corporation, Kyoto University
Coauthor 1	0009160	Kamata	Isaho	Central Research Institute of Electric Power Industry
Coauthor 2		Hoshino	N.	Central Research Institute of Electric Power Industry
Coauthor 3	0005408	Kato	Tomohisa	National Institute of Advanced Industrial Science and Technology
Coauthor 4	0020091	Okumura	Hajime	National Institute of Advanced Industrial Science and Technology
Coauthor 5		Kimoto	T.	Kyoto University
Coauthor 6	0013411	Tsuchida	Hidekazu	Central Research Institute of Electric Power Industry

Related Proposal Information
Proposal Number 2016B3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2016A3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2015B3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2015A3321 Beamline BL08B2 Project Leader 鎌田功穂