User Information

Title/Place of Publication
Publication ID	39553
Date Created	2020.03.06 10:27
DOI	10.4028/www.scientific.net/MSF.924.180
Open Access URL
English Title	X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Materials Science Forum Vol. 924 No. Year of Publication 2018 Page 180
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M60] X-ray Imaging

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author	0009160	Kamata	Isaho	Central Research Institute of Electric Power Industry
Coauthor 1		Hoshino	Norihiro
Coauthor 2	0039591	Tokuda	Yuichiro	National Institute of Advanced Industrial Science and Technology
Coauthor 3		Makino	Emi
Coauthor 4	0006527	Sugiyama	Naohiro	National Institute of Advanced Industrial Science and Technology
Coauthor 5		Kuno	Hironari
Coauthor 6		Kojima	Jun
Coauthor 7	0013411	Tsuchida	Hidekazu	Central Research Institute of Electric Power Industry

Related Proposal Information
Proposal Number 2016B3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2017A3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2017B3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2018A3321 Beamline BL08B2 Project Leader 鎌田功穂