User Information

Title/Place of Publication
Publication ID	39552
Date Created	2020.03.06 10:11
DOI	10.4028/www.scientific.net/MSF.924.160
Open Access URL
English Title	Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Materials Science Forum Vol. 924 No. Year of Publication 2018 Page 160
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M60] X-ray Imaging

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author	0006527	Sugiyama	Naohiro	National Institute of Advanced Industrial Science and Technology
Coauthor 1		Suo	Hiromasa
Coauthor 2		Eto	Kazuma
Coauthor 3	0039591	Tokuda	Yuichiro	National Institute of Advanced Industrial Science and Technology
Coauthor 4	0009160	Kamata	Isaho	Central Research Institute of Electric Power Industry
Coauthor 5		Hoshino	Norihiro
Coauthor 6	0005408	Kato	Tomohisa	National Institute of Advanced Industrial Science and Technology
Coauthor 7	0013411	Tsuchida	Hidekazu	Central Research Institute of Electric Power Industry
Coauthor 8	0020091	Okumura	Hajime	National Institute of Advanced Industrial Science and Technology

Related Proposal Information
Proposal Number 2017A3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2016B3321 Beamline BL08B2 Project Leader 鎌田功穂
Proposal Number 2017B3321 Beamline BL08B2 Project Leader 鎌田功穂