Title/Place of Publication
39551
2020.03.06 09:58
10.7567/JJAP.57.090314
https://doi.org/10.7567/JJAP.57.090314
X-ray Topographical Analysis of 4H-SiC Epitaxial Layers using a Forward-Transmitted Beam under a Multiple-Beam Diffraction Condition
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Japanese Journal of Applied Physics
57 9 2018 090314
[A80] Industrial Applications
[M60] X-ray Imaging
Authors
 
First Author 0009160 Kamata Isaho Central Research Institute of Electric Power Industry
Coauthor 1 0001231 Tsusaka Yoshiyuki University of Hyogo
Coauthor 2 0006449 Tanuma Ryohei Central Research Institute of Electric Power Industry
Coauthor 3 0001232 Matsui Junji University of Hyogo
Related Proposal Information
2017A3269 BL24XU 鎌田 功穂
2017B3269 BL24XU 鎌田 功穂
2016B3321 BL08B2 鎌田 功穂
2018B3269 BL24XU 鎌田 功穂