Title/Place of Publication
38444
2019.08.21 08:31
10.1063/1.5091501
Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) Interface by Optimization of Postdeposition Annealing and Sputtering Conditions
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Journal of Applied Physics
126 7 2019 074105
[A80] Industrial Applications
[M10] X-ray Diffraction
Authors
 
First Author 0003409 Nomura Kenji Fujitsu Laboratories, Ltd.
Coauthor 1 Wang Wensheng Fujitsu Semiconductor, Ltd.
Coauthor 2 Nakamura Ko Fujitsu Semiconductor, Ltd.
Coauthor 3 Eshita Takashi Fujitsu Semiconductor, Ltd., Wakayama University
Coauthor 4 Takai Kazuaki Fujitsu Semiconductor, Ltd.
Coauthor 5 Ozawa Soichiro Fujitsu Semiconductor, Ltd.
Coauthor 6 Yamaguchi Hideshi Fujitsu Laboratories, Ltd.
Coauthor 7 Mihara Satoru Fujitsu Semiconductor, Ltd.
Coauthor 8 Hikosaka Yukinobu Fujitsu Semiconductor, Ltd.
Coauthor 9 Saito Hitoshi Fujitsu Semiconductor, Ltd.
Coauthor 10 Kataoka Yuji Fujitsu Laboratories, Ltd.
Coauthor 11 Kojima Manabu Fujitsu Semiconductor, Ltd.
Related Proposal Information
2018A5110 BL16XU 淡路 直樹
2018B5110 BL16XU 土井 修一