User Information

Title/Place of Publication
Publication ID	38290
Date Created	2019.07.31 16:10
DOI	10.1016/j.jmmm.2019.165536
Open Access URL
English Title	Low Write Current and Strong Durability in High-Speed Spintronics Memory (Spin-Hall MRAM and VoCSM) through Development of a Shunt-Free Design Process and W Spin-Hall Electrode
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Journal of Magnetism and Magnetic Materials Vol. 491 No. Year of Publication 2019 Page 165536
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M50] Photoelectron Spectroscopy

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author		Kato	Yushi	Toshiba Corporation
Coauthor 1		Yoda	Hiroaki	Toshiba Corporation
Coauthor 2	0021764	Inokuchi	Tomoaki	Toshiba Corporation
Coauthor 3		Shimizu	Mariko	Toshiba Corporation
Coauthor 4		Ohsawa	Yuich	Toshiba Corporation
Coauthor 5	0042208	Fujii	Keiko	Toshiba Corporation
Coauthor 6	0004423	Yoshiki	Masahiko	Toshiba Corporation
Coauthor 7		Oikawa	Soichi	Toshiba Corporation
Coauthor 8		Shirotori	Satoshi	Toshiba Corporation
Coauthor 9		Koi	Katsuhiko	Toshiba Corporation
Coauthor 10		Shimomura	Naoharu	Toshiba Corporation
Coauthor 11		Altansargai	Buyandalai	Toshiba Corporation
Coauthor 12		Sugiyama	Hideyuki	Toshiba Corporation
Coauthor 13		Kurobe	Atsushi	Toshiba Corporation

Related Proposal Information
Proposal Number 2018A5360 Beamline BL16B2 Project Leader 藤井景子
Proposal Number 2018B5360 Beamline BL16B2 Project Leader 藤井景子
Proposal Number 2018B5060 Beamline BL16XU Project Leader 藤井景子