User Information

Title/Place of Publication
Publication ID	37231
Date Created	2018.12.05 14:14
DOI	10.7567/1347-4065/aae899
Open Access URL
English Title	Ferroelectric Random Access Memory with High Electric Properties and High Production Yield Realized by Employing an AlO_x Underlying Layer of Pt Bottom Electrode for a La-doped Lead Zirconate Titanate Capacitor
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Japanese Journal of Applied Physics Vol. 58 No. 1 Year of Publication 2019 Page 016503
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M10] X-ray Diffraction

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author		Wang	Wensheng	Fujitsu Semiconductor, Ltd.
Coauthor 1	0003409	Nomura	Kenji	Fujitsu Laboratories, Ltd.
Coauthor 2		Nakamura	Ko	Fujitsu Semiconductor, Ltd.
Coauthor 3		Eshita	Takashi	Fujitsu Semiconductor, Ltd., Wakayama University
Coauthor 4		Ozawa	Soichiro	Fujitsu Semiconductor, Ltd.
Coauthor 5		Yamaguchi	Hideshi	Fujitsu Laboratories, Ltd.
Coauthor 6		Takai	Kazuaki	Fujitsu Semiconductor, Ltd.
Coauthor 7		Watanabe	Junichi	Fujitsu Semiconductor, Ltd.
Coauthor 8		Mihara	Satoru	Fujitsu Semiconductor, Ltd.
Coauthor 9		Hikosaka	Yukinobu	Fujitsu Semiconductor, Ltd.
Coauthor 10		Saito	Hitoshi	Fujitsu Semiconductor, Ltd.
Coauthor 11		Kataoka	Yuji	Fujitsu Laboratories, Ltd.
Coauthor 12		Kojima	Manabu	Fujitsu Semiconductor, Ltd.

Related Proposal Information
Proposal Number 2017B5110 Beamline BL16XU Project Leader 淡路直樹
Proposal Number 2018A5110 Beamline BL16XU Project Leader 淡路直樹