Title/Place of Publication
Publication ID
3693
Date Created
2007.01.30 10:56
DOI
10.1016/S0022-0248(01)02136-4
Open Access URL
English Title
Formation of Epitaxially Ordered SiO
2
in Oxygen-Implanted Silicon During Thermal Annealing
Type of Publication
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)
Journal Title
Journal of Crystal Growth
Vol.
236
No.
1-3
Year of Publication
2002
Page
37-40
Place of Publication (Oral, Poster)
Conference Title
13th International Conference on Crystal Growth (ICCG-13)
Date
2001.07.30-08.04
Venue
Kyoto, Japan
Research Area
Research Method
Authors
User Card ID No.
Last/Family
First/Given
Affiliation
Corresponding
Author
First Author
0001281
Shimura
Takayoshi
Osaka University
Coauthor 1
0004419
Hosoi
Takuji
Osaka University
Coauthor 2
0006085
Fukuda
Kazunori
Osaka University
Coauthor 3
0005066
Umeno
Masataka
Osaka University
Coauthor 4
Ogura
Atsushi
NEC Corporation
Related Proposal Information
Proposal Number
1999A0024
Beamline
BL09XU
Project Leader
志村 考功