User Information

Title/Place of Publication
Publication ID	36843
Date Created	2018.09.27 19:44
DOI	10.7567/JJAP.57.11UA01
Open Access URL
English Title	Development of Highly Reliable Ferroelectric Random Access Memory and its Internet of Things Applications
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Japanese Journal of Applied Physics Vol. 57 No. 11S Year of Publication 2018 Page 11UA01
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M10] X-ray Diffraction

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author		Eshita	Takashi	Wakayama University, Fujitsu Semiconductor, Ltd.
Coauthor 1		Wang	Wensheng	Fujitsu Semiconductor, Ltd.
Coauthor 2	0003409	Nomura	Kenji	Fujitsu Laboratories, Ltd.
Coauthor 3		Nakamura	Ko	Fujitsu Semiconductor, Ltd.
Coauthor 4		Saito	Hitoshi	Fujitsu Semiconductor, Ltd.
Coauthor 5		Yamaguchi	Hideshi	Fujitsu Laboratories, Ltd.
Coauthor 6		Mihara	Satoru	Fujitsu Semiconductor, Ltd.
Coauthor 7		Hikosaka	Yukinobu	Fujitsu Semiconductor, Ltd.
Coauthor 8		Kataoka	Yuji	Fujitsu Laboratories, Ltd.
Coauthor 9		Kojima	Manabu	Fujitsu Semiconductor, Ltd.

Related Proposal Information
Proposal Number 2018A5110 Beamline BL16XU Project Leader 淡路直樹
Proposal Number 2017B5110 Beamline BL16XU Project Leader 淡路直樹