User Information

Title/Place of Publication
Publication ID	36649
Date Created	2018.08.31 19:45
DOI	10.7567/JJAP.57.11UF01
Open Access URL
English Title	Improvement of Ferroelectric Random Access Memory Manufacturing Margin by Employing Pt/AlO_x Bottom Electrode for the La-Doped Pb(Zr,Ti)O₃ Ferroelectric Capacitor
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Japanese Journal of Applied Physics Vol. 57 No. 11S Year of Publication 2018 Page 11UF01
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M10] X-ray Diffraction

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author	0003409	Nomura	Kenji	Fujitsu Laboratories, Ltd.
Coauthor 1		Wang	Wensheng	Fujitsu Semiconductor, Ltd.
Coauthor 2		Yamaguchi	Hideshi	Fujitsu Laboratories, Ltd.
Coauthor 3		Nakamura	Ko	Fujitsu Semiconductor, Ltd.
Coauthor 4		Eshita	Takashi	Fujitsu Semiconductor, Ltd., Wakayama University
Coauthor 5		Ozawa	Soichiro	Fujitsu Semiconductor, Ltd.
Coauthor 6		Takai	Kazuaki	Fujitsu Semiconductor, Ltd.
Coauthor 7		Mihara	Satoru	Fujitsu Semiconductor, Ltd.
Coauthor 8		Hikosaka	Yukinobu	Fujitsu Semiconductor, Ltd.
Coauthor 9		Hamada	Makoto	Fujitsu Semiconductor, Ltd.
Coauthor 10		Kojima	Manabu	Fujitsu Semiconductor, Ltd.
Coauthor 11		Kataoka	Yuji	Fujitsu Laboratories, Ltd.

Related Proposal Information
Proposal Number 2018A5110 Beamline BL16XU Project Leader 淡路直樹
Proposal Number 2017B5110 Beamline BL16XU Project Leader 淡路直樹