User Information

Title/Place of Publication
Publication ID	36431
Date Created	2018.07.12 21:41
DOI	10.1380/ejssnt.2018.257
Open Access URL	https://www.jstage.jst.go.jp/article/ejssnt/16/0/16_257/_article/-char/en
English Title	Photoelectron Nano-Spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title e-Journal of Surface Science and Nanotechnology Vol. 16 No. Year of Publication 2018 Page 257-261
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A30] Materials Science and Engineering
Research Method	[M50] Photoelectron Spectroscopy

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author	0004068	Oshima	Masaharu	The University of Tokyo, Tokyo City University
Coauthor 1	0022672	Mori	Daisuke	Fuji Electric Corporation
Coauthor 2	0028428	Takigawa	Aki	Fuji Electric Corporation
Coauthor 3		Otsuki	Akihiko	Fuji Electric Corporation
Coauthor 4	0026912	Nagamura	Naoka	National Institute for Materials Science
Coauthor 5	0039687	Konno	Shun	Tokyo University of Science
Coauthor 6	0041977	Takahashi	Yoshinobu	Tokyo University of Science
Coauthor 7	0001254	Kotsugi	Masato	Tokyo University of Science
Coauthor 8	0008035	Nohira	Hiroshi	Tokyo City University

Related Proposal Information
Proposal Number 2016A7402 Beamline BL07LSU Project Leader 尾嶋正治