タイトル・発表先
35968
2018.04.23 10:48
10.7567/APEX.7.065502
High-speed, High-quality Crystal Growth of 4H-SiC by High-temperature Gas Source Method
原著論文／博士論文／査読付プロシーディングス
Applied Physics Express
7 6 2014 065502
[A80] 産業利用
[M60] X線イメージング
著者情報
 
主著者 Hoshino Norihiro Central Research Institute of Electric Power Industry
共著者 1 0009160 Kamata Isaho Central Research Institute of Electric Power Industry
共著者 2 0039591 Tokuda Yuichiro R&D Partnership for Future Power Electronics Technology, Denso Corporation
共著者 3 Makino Emi R&D Partnership for Future Power Electronics Technology, Denso Corporation
共著者 4 0006527 Sugiyama Naohiro R&D Partnership for Future Power Electronics Technology, Denso Corporation
共著者 5 Kojima Jun R&D Partnership for Future Power Electronics Technology, Denso Corporation
共著者 6 0013411 Tsuchida Hidekazu Central Research Institute of Electric Power Industry
関連課題情報
2016A3321 BL08B2 鎌田 功穂