User Information

Title/Place of Publication
Publication ID	35968
Date Created	2018.04.23 10:48
DOI	10.7567/APEX.7.065502
Open Access URL
English Title	High-speed, High-quality Crystal Growth of 4H-SiC by High-temperature Gas Source Method
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Applied Physics Express Vol. 7 No. 6 Year of Publication 2014 Page 065502
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M60] X-ray Imaging

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author		Hoshino	Norihiro	Central Research Institute of Electric Power Industry
Coauthor 1	0009160	Kamata	Isaho	Central Research Institute of Electric Power Industry
Coauthor 2	0039591	Tokuda	Yuichiro	R&D Partnership for Future Power Electronics Technology, Denso Corporation
Coauthor 3		Makino	Emi	R&D Partnership for Future Power Electronics Technology, Denso Corporation
Coauthor 4	0006527	Sugiyama	Naohiro	R&D Partnership for Future Power Electronics Technology, Denso Corporation
Coauthor 5		Kojima	Jun	R&D Partnership for Future Power Electronics Technology, Denso Corporation
Coauthor 6	0013411	Tsuchida	Hidekazu	Central Research Institute of Electric Power Industry

Related Proposal Information
Proposal Number 2016A3321 Beamline BL08B2 Project Leader 鎌田功穂