User Information

Title/Place of Publication
Publication ID	34644
Date Created	2017.10.05 16:57
DOI	10.7567/JJAP.56.10PF14
Open Access URL
English Title	Control of La-doped Pb(Zr,Ti)O₃ Crystalline Orientation and its Influence on the Properties of Ferroelectric Random Access Memory
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Japanese Journal of Applied Physics Vol. 56 No. 10S Year of Publication 2017 Page 10PF14
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M10] X-ray Diffraction

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author		Wang	Wensheng	Fujitsu Semiconductor, Ltd.
Coauthor 1	0003409	Nomura	Kenji	Fujitsu Laboratories, Ltd.
Coauthor 2		Yamaguchi	Hideshi	Fujitsu Laboratories, Ltd.
Coauthor 3		Nakamura	Ko	Fujitsu Semiconductor, Ltd.
Coauthor 4		Eshita	Takashi	Fujitsu Semiconductor, Ltd.
Coauthor 5		Ozawa	Soichiro	Fujitsu Semiconductor, Ltd.
Coauthor 6		Takai	Kazuaki	Fujitsu Semiconductor, Ltd.
Coauthor 7		Mihara	Satoru	Fujitsu Semiconductor, Ltd.
Coauthor 8		Hikosaka	Yukinobu	Fujitsu Semiconductor, Ltd.
Coauthor 9		Hamada	Makoto	Fujitsu Semiconductor, Ltd.
Coauthor 10		Kataoka	Yuji	Fujitsu Laboratories, Ltd.

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