Title/Place of Publication
3327
2007.01.30 10:56
10.1143/JJAP.41.L1013
Measurement of Strain Distribution in InGaAsP Selective-Area Growth Layers Using a Micro-Area X-Ray Diffraction Method with Sub-μm Spatial Resolution
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Japanese Journal of Applied Physics
41 9A/B 2002 L1013-L1015
Authors
 
First Author 0004124 Kimura Shigeru NEC Corporation
Coauthor 1 0001230 Kagoshima Yasushi Himeji Institute of Technology
Coauthor 2 0003403 Kobayashi Kenji NEC Corporation
Coauthor 3 0004081 Izumi Koichi NEC Corporation
Coauthor 4 Sakata Yasutaka NEC Kansai, Ltd.
Coauthor 5 Sudo Shingo NEC Compound Semiconductor Devices
Coauthor 6 0004807 Yokoyama Yoshiyuki Himeji Institute of Technology
Coauthor 7 0005964 Niimi Toshihiro Himeji Institute of Technology
Coauthor 8 0001231 Tsusaka Yoshiyuki Himeji Institute of Technology
Coauthor 9 0001232 Matsui Junji Himeji Institute of Technology
Related Proposal Information
C01B5046 BL24XU 泉 弘一