User Information

Title/Place of Publication
Publication ID	31154
Date Created	2016.04.26 16:41
DOI	10.4028/www.scientific.net/MSF.778-780.59
Open Access URL
English Title	Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Materials Science Forum Vol. 778-780 No. Year of Publication 2014 Page 59-62
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area	[A80] Industrial Applications
Research Method	[M60] X-ray Imaging

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author	0009160	Kamata	Isaho	Central Research Institute of Electric Power Industry
Coauthor 1		Hoshino	Norihiro	Central Research Institute of Electric Power Industry
Coauthor 2	0039591	Tokuda	Yuichiro	R&D Partnership for Future Power Electronics Technology, Denso Corporation
Coauthor 3		Makino	Emi	R&D Partnership for Future Power Electronics Technology, Denso Corporation
Coauthor 4		Kojima	Jun	R&D Partnership for Future Power Electronics Technology, Denso Corporation
Coauthor 5	0013411	Tsuchida	Hidekazu	Central Research Institute of Electric Power Industry
Coauthor 6

Related Proposal Information
Proposal Number 2011B3321 Beamline BL08B2 Project Leader 土田秀一
Proposal Number 2012A3321 Beamline BL08B2 Project Leader 土田秀一
Proposal Number 2012B3321 Beamline BL08B2 Project Leader 土田秀一
Proposal Number 2013A3321 Beamline BL08B2 Project Leader 土田秀一
Proposal Number 2013B3321 Beamline BL08B2 Project Leader 土田秀一
Proposal Number 2014A3321 Beamline BL08B2 Project Leader 土田秀一