タイトル・発表先
2112
2007.01.30 10:55
10.4028/www.scientific.net/MSF.389-393.87
Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
原著論文／博士論文／査読付プロシーディングス
Materials Science Forum
389-393 2002 87-90
著者情報
 
主著者 0005411 Oyanagi Naoki R&D Association for Future Electron Devices (FED), Ultra-Low-Loss Power Device Technology Research Body (UPR)
共著者 1 0003240 Yamaguchi Hirotaka National Institute of Advanced Industrial Science and Technology (AIST), Ultra-Low-Loss Power Device Technology Research Body (UPR)
共著者 2 0005408 Kato Tomohisa National Institute of Advanced Industrial Science and Technology (AIST), Ultra-Low-Loss Power Device Technology Research Body (UPR)
共著者 3 Nishizawa Shin-ichi National Institute of Advanced Industrial Science and Technology (AIST), Ultra-Low-Loss Power Device Technology Research Body (UPR)
共著者 4 0004600 Arai Kazuo National Institute of Advanced Industrial Science and Technology (AIST), Ultra-Low-Loss Power Device Technology Research Body (UPR)
関連課題情報
2000B0314 BL28B2 山口 博隆
2001A0122 BL28B2 山口 博隆