User Information

Title/Place of Publication
Publication ID	2112
Date Created	2007.01.30 10:55
DOI	10.4028/www.scientific.net/MSF.389-393.87
Open Access URL
English Title	Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Materials Science Forum Vol. 389-393 No. Year of Publication 2002 Page 87-90
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area
Research Method

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author	0005411	Oyanagi	Naoki	R&D Association for Future Electron Devices (FED), Ultra-Low-Loss Power Device Technology Research Body (UPR)
Coauthor 1	0003240	Yamaguchi	Hirotaka	National Institute of Advanced Industrial Science and Technology (AIST), Ultra-Low-Loss Power Device Technology Research Body (UPR)
Coauthor 2	0005408	Kato	Tomohisa	National Institute of Advanced Industrial Science and Technology (AIST), Ultra-Low-Loss Power Device Technology Research Body (UPR)
Coauthor 3		Nishizawa	Shin-ichi	National Institute of Advanced Industrial Science and Technology (AIST), Ultra-Low-Loss Power Device Technology Research Body (UPR)
Coauthor 4	0004600	Arai	Kazuo	National Institute of Advanced Industrial Science and Technology (AIST), Ultra-Low-Loss Power Device Technology Research Body (UPR)

Related Proposal Information
Proposal Number 2000B0314 Beamline BL28B2 Project Leader 山口博隆
Proposal Number 2001A0122 Beamline BL28B2 Project Leader 山口博隆