Title/Place of Publication
21052
2012.02.29 15:48
10.1143/JJAP.51.02BP01
Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Japanese Journal of Applied Physics
51 2 Issue 2 2012 02BP01
Authors
 
First Author 0016163 Sasaki Takuo Toyota Technological Institute
Coauthor 1 0027035 Shimomura Kenichi Toyota Technological Institute
Coauthor 2 0016208 Suzuki Hidetoshi University of Miyazaki
Coauthor 3 0001168 Takahashi Masamitsu JAEA
Coauthor 4 0005744 Kamiya Itaru Toyota Technological Institute
Coauthor 5 0014251 Ohshita Yoshio Toyota Technological Institute
Coauthor 6 0023399 Yamaguchi Masafumi Toyota Technological Institute
Related Proposal Information
2010A3571 BL11XU 山口 真史