Title/Place of Publication
Publication ID
21052
Date Created
2012.02.29 15:48
DOI
10.1143/JJAP.51.02BP01
Open Access URL
English Title
Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
Type of Publication
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)
Journal Title
Japanese Journal of Applied Physics
Vol.
51
No.
2 Issue 2
Year of Publication
2012
Page
02BP01
Place of Publication (Oral, Poster)
Conference Title
Date
Venue
Research Area
Research Method
Authors
User Card ID No.
Last/Family
First/Given
Affiliation
Corresponding
Author
First Author
0016163
Sasaki
Takuo
Toyota Technological Institute
Coauthor 1
0027035
Shimomura
Kenichi
Toyota Technological Institute
Coauthor 2
0016208
Suzuki
Hidetoshi
University of Miyazaki
Coauthor 3
0001168
Takahashi
Masamitsu
JAEA
Coauthor 4
0005744
Kamiya
Itaru
Toyota Technological Institute
Coauthor 5
0014251
Ohshita
Yoshio
Toyota Technological Institute
Coauthor 6
0023399
Yamaguchi
Masafumi
Toyota Technological Institute
Related Proposal Information
Proposal Number
2010A3571
Beamline
BL11XU
Project Leader
山口 真史