Title/Place of Publication
Publication ID
18780
Date Created
2011.05.30 11:09
DOI
10.1016/j.jcrysgro.2010.10.005
Open Access URL
English Title
Growth Temperature Dependence of Strain Relaxation during InGaAs/GaAs(001) Heteroepitaxy
Type of Publication
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)
Journal Title
Journal of Crystal Growth
Vol.
323
No.
1
Year of Publication
2011
Page
13-16
Place of Publication (Oral, Poster)
Conference Title
Date
Venue
Research Area
Research Method
Authors
User Card ID No.
Last/Family
First/Given
Affiliation
Corresponding
Author
First Author
0016163
Sasaki
Takuo
Toyota Technological Institute
Coauthor 1
0016208
Suzuki
Hidetoshi
University of Miyazaki
Coauthor 2
0024182
Sai
Akihisa
Toyota Technological Institute
Coauthor 3
0001168
Takahashi
Masamitsu
JAEA
Coauthor 4
0004806
Fujikawa
Seiji
JAEA
Coauthor 5
0005744
Kamiya
Itaru
Toyota Technological Institute
Coauthor 6
0014251
Ohshita
Yoshio
Toyota Technological Institute
Coauthor 7
0023399
Yamaguchi
Masafumi
Toyota Technological Institute
Related Proposal Information
Proposal Number
2009A3573
Beamline
BL11XU
Project Leader
山口 真史
Proposal Number
2009B3571
Beamline
BL11XU
Project Leader
山口 真史