Title/Place of Publication
18780
2011.05.30 11:09
10.1016/j.jcrysgro.2010.10.005
Growth Temperature Dependence of Strain Relaxation during InGaAs/GaAs(001) Heteroepitaxy
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Journal of Crystal Growth
323 1 2011 13-16
Authors
 
First Author 0016163 Sasaki Takuo Toyota Technological Institute
Coauthor 1 0016208 Suzuki Hidetoshi University of Miyazaki
Coauthor 2 0024182 Sai Akihisa Toyota Technological Institute
Coauthor 3 0001168 Takahashi Masamitsu JAEA
Coauthor 4 0004806 Fujikawa Seiji JAEA
Coauthor 5 0005744 Kamiya Itaru Toyota Technological Institute
Coauthor 6 0014251 Ohshita Yoshio Toyota Technological Institute
Coauthor 7 0023399 Yamaguchi Masafumi Toyota Technological Institute
Related Proposal Information
2009A3573 BL11XU 山口 真史
2009B3571 BL11XU 山口 真史