Title/Place of Publication
Publication ID
18499
Date Created
2011.03.03 17:26
DOI
10.1143/JPSJ.80.024709
Open Access URL
English Title
Low Critical Concentration of Metal-Insulator Transition of Vanadium Doped Amorphous Boron
Type of Publication
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)
Journal Title
Journal of the Physical Society of Japan
Vol.
80
No.
2
Year of Publication
2011
Page
024709
Place of Publication (Oral, Poster)
Conference Title
Date
Venue
Research Area
Research Method
Authors
User Card ID No.
Last/Family
First/Given
Affiliation
Corresponding
Author
First Author
0021766
Tanabe
Kenji
The University of Tokyo
Coauthor 1
Soga
Kohei
Tokyo University of Science
Coauthor 2
0013243
Hosoi
Shizuka
The University of Tokyo, Sony Corporation
Coauthor 3
Osumi
Kazuaki
The University of Tokyo
Coauthor 4
Yamaguchi
Hideshi
The University of Tokyo
Coauthor 5
0000182
Uruga
Tomoya
SPring-8/JASRI
Coauthor 6
0006131
Kimura
Kaoru
The University of Tokyo
Related Proposal Information
Proposal Number
2007B1952
Beamline
BL14B2
Project Leader
木村 薫
Proposal Number
2008A1828
Beamline
BL14B2
Project Leader
木村 薫