Title/Place of Publication
1809
2007.01.30 10:55
10.1143/JJAP.40.7129
Capacitance X-Ray Absorption Fine Structure Method Using Dopant Photoionization: X-Ray Absorption Spectroscopy of ∼nm Thickness Channel in Semiconductor Devices
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Japanese Journal of Applied Physics
40 12 2001 7129-7134
Authors
 
First Author 0001178 Ishii Masashi JASRI
Related Proposal Information
1999B0168 BL10XU 石井 真史
2000B0181 BL10XU 石井 真史