Title/Place of Publication
Publication ID
17160
Date Created
2010.07.16 16:05
DOI
10.1557/PROC-1268-EE06-02
Open Access URL
English Title
In situ
Study of Strain Relaxation Mechanisms during Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping
Type of Publication
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)
Journal Title
Materials Research Society Symposia Proceedings
Vol.
1268
No.
Year of Publication
2010
Page
EE06-02
Place of Publication (Oral, Poster)
Conference Title
Date
Venue
Research Area
Research Method
Authors
User Card ID No.
Last/Family
First/Given
Affiliation
Corresponding
Author
First Author
0016163
Sasaki
Takuo
Toyota Technological Institute
Coauthor 1
0016208
Suzuki
Hidetoshi
Miyazaki University
Coauthor 2
0024182
Sai
Akihisa
Toyota Technological Institute
Coauthor 3
0001168
Takahashi
Masamitsu
JAEA
Coauthor 4
0004806
Fujikawa
Seiji
JAEA
Coauthor 5
0014251
Ohshita
Yoshio
Toyota Technological Institute
Coauthor 6
0023399
Yamaguchi
Masafumi
Toyota Technological Institute
Related Proposal Information
Proposal Number
2008B3571
Beamline
BL11XU
Project Leader
山口 真史
Proposal Number
2009A3573
Beamline
BL11XU
Project Leader
山口 真史