Title/Place of Publication
2010.07.16 16:05
In situ Study of Strain Relaxation Mechanisms during Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Materials Research Society Symposia Proceedings
1268 2010 EE06-02
First Author 0016163 Sasaki Takuo Toyota Technological Institute
Coauthor 1 0016208 Suzuki Hidetoshi Miyazaki University
Coauthor 2 0024182 Sai Akihisa Toyota Technological Institute
Coauthor 3 0001168 Takahashi Masamitsu JAEA
Coauthor 4 0004806 Fujikawa Seiji JAEA
Coauthor 5 0014251 Ohshita Yoshio Toyota Technological Institute
Coauthor 6 0023399 Yamaguchi Masafumi Toyota Technological Institute
Related Proposal Information
2008B3571 BL11XU 山口 真史
2009A3573 BL11XU 山口 真史