Title/Place of Publication
Publication ID
14825
Date Created
2009.11.09 12:48
DOI
10.1088/1742-6596/190/1/012116
Open Access URL
English Title
Fluorescence XAFS Study of Local Structures in High-k Gate Dielectrics HfSiON/SiON/Si Annealed at Various Nitrogen Gas Partial Pressure
Type of Publication
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)
Journal Title
Journal of Physics: Conference Series
Vol.
190
No.
Year of Publication
2009
Page
012116
Place of Publication (Oral, Poster)
Conference Title
International Conference on X-ray Absorption Fine Structure (XAFS)
Date
2009.07.26-07.31
Venue
Camerino, Italy
Research Area
[A10] Life Science
Research Method
Authors
User Card ID No.
Last/Family
First/Given
Affiliation
Corresponding
Author
First Author
0007719
Ofuchi
Hironori
SPring-8/JASRI
Coauthor 1
0017294
Toyoda
Satoshi
The University of Tokyo
Coauthor 2
0019856
Ikeda
Kazuto
Semiconductor Technology Academic Research Center
Coauthor 3
0019854
Liu
Guo Lin
Semiconductor Technology Academic Research Center
Coauthor 4
0014110
Liu
Ziyuan
Semiconductor Technology Academic Research Center
Coauthor 5
0004068
Oshima
Masaharu
The University of Technology
Related Proposal Information
Proposal Number
2007B1939
Beamline
BL14B2
Project Leader
尾嶋 正治
Proposal Number
2008A1928
Beamline
BL14B2
Project Leader
尾嶋 正治