User Information

Title/Place of Publication
Publication ID	11343
Date Created	2007.08.22 10:13
DOI	10.1002/pssb.200674759
Open Access URL
English Title	First-principles Calculation and X-ray Absorption Fine Structure Analysis of Fe Doping Mechanism for Semi-insulating GaN Growth on GaAs Substrates
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title Physica Status Solidi B Vol. 244 No. 6 Year of Publication 2007 Page 1862-1866
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area
Research Method

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation
First Author		Togashi	Rie	Tokyo University of Agriculture and Technology
Coauthor 1		Satoh	Fumitaka	Tokyo University of Agriculture and Technology
Coauthor 2		Murakami	Hisashi	Tokyo University of Agriculture and Technology
Coauthor 3	0003239	Iihara	Junji	Sumitomo Electric Industries, Ltd.
Coauthor 4	0003845	Yamaguchi	Koji	Sumitomo Electric Industries, Ltd.
Coauthor 5		Kumagai	Yoshinao	Tokyo University of Agriculture and Technology
Coauthor 6		Koukitu	Akinori	Tokyo University of Agriculture and Technology

Related Proposal Information
Proposal Number C05A4030 Beamline BL16B2 Project Leader 飯原順次