Title/Place of Publication
10135
2007.01.30 10:57
10.1063/1.2353781
Detailed Structural Analysis and Dielectric Properties of Silicon Nitride Film Fabricated Using Pure Nitrogen Plasma Generated Near Atmospheric Pressure
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Journal of Applied Physics
100 7 2006 073710
Authors
 
First Author Hayakawa Ryoma Osaka Prefecture University
Coauthor 1 Nakae Mari Osaka Prefecture University
Coauthor 2 Yoshimura Takeshi Osaka Prefecture University
Coauthor 3 Ashida Atsushi Osaka Prefecture University
Coauthor 4 Fujimura Norifumi Osaka Prefecture University
Coauthor 5 Uehara Tsuyoshi Sekisui Chenical Co., Ltd.
Coauthor 6 0002812 Tagawa Masahito Kobe University
Coauthor 7 0000390 Teraoka Yuden JAEA
Related Proposal Information
2005B0102 BL23SU 田川 雅人