Title/Place of Publication
10124
2007.01.30 10:57
10.1016/j.jcrysgro.2006.08.027
Fe-doped Semi-insulating GaN Substrates Prepared by Hydride Vapor-Phase Epitaxy Using GaAs Starting Substrates
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Journal of Crystal Growth
296 1 2006 11-14
Authors
 
First Author Kumagai Yoshinao Tokyo University of Agriculture and Technology
Coauthor 1 Satoh Fumitaka Tokyo University of Agriculture and Technology
Coauthor 2 Togashi Rie Tokyo University of Agriculture and Technology
Coauthor 3 Murakami Hisashi Tokyo University of Agriculture and Technology
Coauthor 4 Takemoto Kikurou Tokyo University of Agriculture and Technology
Coauthor 5 0003239 Iihara Junji Sumitomo Electric Industries, Ltd.
Coauthor 6 0003845 Yamaguchi Koji Sumitomo Electric Industries, Ltd.
Coauthor 7 Koukitu Akinori Tokyo University of Agriculture and Technology
Related Proposal Information
C05A4030 BL16B2 飯原 順次