User Information

Title/Place of Publication
Publication ID	10100
Date Created	2007.01.30 10:57
DOI	10.11470/oubutsu.75.9_1140
Open Access URL	https://doi.org/10.11470/oubutsu.75.9_1140
English Title	Growth and Dislocation-Structural Analysis of Ultrahigh-Quality Silicon Carbide Single Crystals
Type of Publication	Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)	Journal Title 応用物理 (Journal of Applied Physics, Japan) Vol. 75 No. 9 Year of Publication 2006 Page 1140-1143
Place of Publication (Oral, Poster)	Conference Title Date Venue
Research Area
Research Method

Authors
	User Card ID No.	Last/Family	First/Given	Affiliation	Corresponding Author
First Author	0007676	Nakamura	Daisuke	Toyota Central R&D Laboratories, Inc.
Coauthor 1	0006044	Yamaguchi	Satoshi	Toyota Central R&D Laboratories, Inc.

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