Title/Place of Publication
Publication ID
10096
Date Created
2007.01.30 10:57
DOI
10.1016/j.mee.2005.10.039
Open Access URL
English Title
Ultrahigh-quality Single Crystals of Silicon Carbide by Alternate Repetition of Growth Perpendicular to
c
-axis
Type of Publication
Refereed Journals, Doctoral Thesis, Refereed Proceedings
Place of Publication (Journal)
Journal Title
Microelectronic Engineering
Vol.
83
No.
1
Year of Publication
2006
Page
139-141
Place of Publication (Oral, Poster)
Conference Title
Date
Venue
Research Area
Research Method
Authors
User Card ID No.
Last/Family
First/Given
Affiliation
Corresponding
Author
First Author
0007676
Nakamura
Daisuke
Toyota Central Research and Development Laboratories, Inc.
Related Proposal Information
Proposal Number
2002B0335
Beamline
BL20B2
Project Leader
広瀬 美治
Proposal Number
2003A0289
Beamline
BL20B2
Project Leader
広瀬 美治
Proposal Number
2004A0091
Beamline
BL20B2
Project Leader
広瀬 美治